Onsemi - FGA20N120FTDTU

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FGA20N120FTDTU by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGA20N120FTDTU
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Threshold Voltage: 7.5 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet FGA20N120FTDTU Datasheet
In Stock2,212
NAME DESCRIPTION
Maximum Collector Current (IC): 40 A
Maximum Power Dissipation (Abs): 298 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 25 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Fall Time (tf): 320 ns
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