FGA60N65SMD by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FGA60N65SMD
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	FGA60N65SMD Datasheet
In Stock	2,178

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	120 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	70 ns
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	600 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Maximum Fall Time (tf):	68 ns
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	650 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,178	$3.340	$7,274.520

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