Onsemi - FGD3440G2-F085

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FGD3440G2-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGD3440G2-F085
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Maximum Collector-Emitter Voltage: 450 V; Maximum Gate-Emitter Voltage: 14 V;
Datasheet FGD3440G2-F085 Datasheet
In Stock9,736
NAME DESCRIPTION
Other Names: 1990-FGD3440G2-F085DKR
FGD3440G2-F085TR
FGD3440G2_F085CT
1990-FGD3440G2-F085CT
FGD3440G2-F085DKR
1990-FGD3440G2-F085TR
FGD3440G2-F085CT
FGD3440G2_F085
FGD3440G2_F085TR-ND
FGD3440G2_F085CT-ND
FGD3440G2_F085DKR
FGD3440G2_F085DKR-ND
FGD3440G2_F085TR
Maximum Collector Current (IC): 26.9 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 166 W
Maximum Collector-Emitter Voltage: 450 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 14 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
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