Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FGD3N60UNDF |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 600 V; |
| Datasheet | FGD3N60UNDF Datasheet |
| In Stock | 1,669 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 6 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | MOTOR CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 8.5 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| Nominal Turn Off Time (toff): | 146 ns |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 60 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 7.4 ns |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-252 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Maximum Collector-Emitter Voltage: | 600 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | 260 |
