Onsemi - FGH4L50T65MQDC50

  1. Home
  2. Onsemi - FGH4L50T65MQDC50
FGH4L50T65MQDC50 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FGH4L50T65MQDC50
Description Insulated Gate Bipolar Transistors;
Datasheet FGH4L50T65MQDC50 Datasheet
In Stock1,347
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,347 $9.860 $13,281.420

Popular Products

Category Top Products

IRG7PH50K10DPBF by International Rectifier

IRG7PH50K10DPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 110 ns; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
AUIRGB4062D1 by International Rectifier

AUIRGB4062D1

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 246 W; Maximum Collector Current (IC): 59 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Fall Time (tf): 40 ns;
IKB40N65EH5ATMA1 by Infineon Technologies

IKB40N65EH5ATMA1

Infineon Technologies

IKB40N65EH5ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 74A. It is designed for power control applications, featuring a built-in diode, small outline package style, and operating temperature range from -40 to 175 °C.
FGB20N60SFD-F085 by Onsemi

FGB20N60SFD-F085

Onsemi

FGB20N60SFD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Ptot. Ideal for power control applications due to its fast tr of 21ns and tf of 43ns. AEC-Q101 certified for automotive use, it features a small outline package style.
IRGR4045DPBF by International Rectifier

IRGR4045DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: POWER CONTROL;
CM600DU-12NFH by Powerex

CM600DU-12NFH

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
IKW40N120T2FKSA1 by Infineon Technologies

IKW40N120T2FKSA1

Infineon Technologies

IKW40N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 75A IC, and 600ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures reliability in high-temp environments up to 175°C.
FGA30T65SHD by Fairchild Semiconductor

FGA30T65SHD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
NGTB15N120FL2WG by Onsemi

NGTB15N120FL2WG

Onsemi

NGTB15N120FL2WG by Onsemi is an N-CHANNEL IGBT with 294W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control units.
NGTB30N120LWG by Onsemi

NGTB30N120LWG

Onsemi

NGTB30N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 560W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 596ns.
IRG4BC40UPBF by Infineon Technologies

IRG4BC40UPBF

Infineon Technologies

IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
IRG4BC30UPBF by International Rectifier

IRG4BC30UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 320 ns;
IRGB20B60PD1PBF by International Rectifier

IRGB20B60PD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;
AUIRG4BC30SSTRL by International Rectifier

AUIRG4BC30SSTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;
IKD04N60RFAATMA1 by Infineon Technologies

IKD04N60RFAATMA1

Infineon Technologies

IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
FF300R12KE3HOSA1 by Infineon Technologies

FF300R12KE3HOSA1

Infineon Technologies

FF300R12KE3HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, current of 440A, and turn-off time of 830ns. Ideal for POWER CONTROL applications due to its SILICON material and operating temperature up to 150°C.
HGTG18N120BND by Fairchild Semiconductor

HGTG18N120BND

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 54 A; JESD-30 Code: R-PSFM-T3;
NGTB20N120IHRWG by Onsemi

NGTB20N120IHRWG

Onsemi

NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
IRG4BC20WPBF by Infineon Technologies

IRG4BC20WPBF

Infineon Technologies

IRG4BC20WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 60W. It has a nominal turn-off time of 300ns, making it ideal for motor control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-temperature environments up to 150°C.
IRG4BC30KD-SPBF by International Rectifier

IRG4BC30KD-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Maximum Operating Temperature: 150 Cel;