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Manufacturer | Onsemi |
---|---|
Manufacturer's Part Number | FGP3440G2-F085 |
Description | N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Maximum Gate-Emitter Voltage: 12 V; Maximum Collector-Emitter Voltage: 390 V; |
Datasheet | FGP3440G2-F085 Datasheet |
In Stock | 1,918 |
NAME | DESCRIPTION |
---|---|
Maximum Collector Current (IC): | 26.9 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Maximum Rise Time (tr): | 7000 ns |
Maximum Gate-Emitter Threshold Voltage: | 2.2 V |
Sub-Category: | Insulated Gate BIP Transistors |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Terminal Finish: | Matte Tin (Sn) - annealed |
JESD-609 Code: | e3 |
Maximum Power Dissipation (Abs): | 166 W |
Maximum Collector-Emitter Voltage: | 390 V |
Maximum Operating Temperature: | 175 Cel |
Maximum Gate-Emitter Voltage: | 12 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Fall Time (tf): | 15000 ns |