Onsemi - FJB3307DTM

FJB3307DTM by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FJB3307DTM
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A; Terminal Finish: TIN;
Datasheet FJB3307DTM Datasheet
In Stock2,729
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 80 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 5
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 400 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

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