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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FJD5304DTM |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 4 A; Maximum Power Dissipation Ambient: 1.25 W; |
| Datasheet | FJD5304DTM Datasheet |
| In Stock | 970 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 4 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 8 |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 30 W |
| Maximum Collector-Emitter Voltage: | 400 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Additional Features: | FREE WHEELING DIODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum VCEsat: | 1.5 V |
| Maximum Power Dissipation Ambient: | 1.25 W |









