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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FJV4103R |
| Description | PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; |
| Datasheet | FJV4103R Datasheet |
| In Stock | 1,618 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 200 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 56 |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .2 W |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Additional Features: | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum VCEsat: | .3 V |
| Maximum Power Dissipation Ambient: | .2 W |
