FQI7N80TU by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FQI7N80TU
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Pulsed Drain Current (IDM): 26.4 A; Avalanche Energy Rating (EAS): 580 mJ;
Datasheet	FQI7N80TU Datasheet
In Stock	1,521

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.6 A
Maximum Pulsed Drain Current (IDM):	26.4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	167 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.5 ohm
Avalanche Energy Rating (EAS):	580 mJ
JEDEC-95 Code:	TO-262AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	6.6 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,521	$1.340	$2,038.140

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