Onsemi - FQP13N50C-F105

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FQP13N50C-F105 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FQP13N50C-F105
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 860 mJ; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT;
Datasheet FQP13N50C-F105 Datasheet
In Stock1,210
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 860 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 52 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 500 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
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