FQPF5N60C by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FQPF5N60C
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING;
Datasheet	FQPF5N60C Datasheet
In Stock	2,760

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.5 A
Maximum Pulsed Drain Current (IDM):	18 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	2.5 ohm
Avalanche Energy Rating (EAS):	210 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,760	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;