Onsemi - HUF75332P3

HUF75332P3 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number HUF75332P3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 145 W; Maximum Operating Temperature: 175 Cel; Terminal Form: THROUGH-HOLE;
Datasheet HUF75332P3 Datasheet
In Stock1,358
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): 145 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .019 ohm
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 60 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
1,358 $0.860 $1,167.880

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