Onsemi - HUFA76413DK8T-F085

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HUFA76413DK8T-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number HUFA76413DK8T-F085
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; JESD-609 Code: e4;
Datasheet HUFA76413DK8T-F085 Datasheet
In Stock985
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 260 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: ULTRA-LOW RESISTANCE
Peak Reflow Temperature (C): 260
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