Onsemi - IRLM120A

IRLM120A by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number IRLM120A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Maximum Turn Off Time (toff): 80 ns; Package Body Material: PLASTIC/EPOXY;
Datasheet IRLM120A Datasheet
In Stock2,171
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 50 ns
Maximum Drain Current (ID): 2.3 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2.7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 80 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .22 ohm
Avalanche Energy Rating (EAS): 105 mJ
Maximum Feedback Capacitance (Crss): 50 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 2.3 A
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Pricing (USD)

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