Onsemi - ISB-A30-0

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ISB-A30-0 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ISB-A30-0
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain Current (Abs) (ID): 4 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet ISB-A30-0 Datasheet
In Stock148
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.6 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): 4 A
Maximum Drain Current (Abs) (ID): 4 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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