Onsemi - J310RLRPG

Diodes Inc.'s BSS123W-7-F is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 0.17A max drain current, and 6ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.2W and can withstand temperatures from -55 to 150°C.

FDN335N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.7A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. This SMALL OUTLINE transistor has GULL WING terminals and matte tin finish for surface mount assembly.

The Onsemi FDC602P is a P-CHANNEL FET with 20V DS Breakdown Voltage, 5.5A ID, and 0.033 ohm RDS. Ideal for SWITCHING applications in small outline packages with -55 to 150 °C operating range.

The Onsemi FDG6332C is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include max drain current of 0.7A, min DS breakdown voltage of 20V, and max power dissipation of 0.3W.

Infineon's BSS670S2LH6327XTSA1 is a N-CHANNEL FET with 55V DS breakdown voltage, 0.54A ID, and 0.825 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.

Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 50 V; Maximum Drain-Source On Resistance: 10 ohm;

NTR4502PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features single configuration with built-in diode, 1.95A max drain current, and 0.2 ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.4W and can withstand temperatures up to 150°C.

NXP Semiconductors' BSS138PW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for switching applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in enhancement mode. This small outline transistor has GULL WING terminals and meets AEC-Q101 standards for automotive use.

NXP Semiconductors' BSS84AKM,315 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a chip carrier package style. Operating at up to 150°C, it has an 8.5 ohm max drain-source on resistance.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Qualification: Not Qualified; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;

Small Signal Field-Effect Transistors;

FDN360P by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 0.08 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 2A max drain current, this MOSFET has a small outline package style suitable for surface mount designs.

LND150N3-GP002 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max ID of 0.03A and RDS(on) of 1000Ω. With a temp range of -55 to 150°C, this transistor features a built-in diode and low Crss for efficient performance.

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Maximum Drain Current (Abs) (ID): .28 A; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

2N7002PW,115 by NXP Semiconductors is a single N-channel FET with max drain current of 0.31A and power dissipation of 0.83W. Ideal for applications requiring high temperature resistance up to 150°C, it features metal-oxide semiconductor technology and surface mount configuration.