Onsemi - KSB1116S-G

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KSB1116S-G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number KSB1116S-G
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): 1 A;
Datasheet KSB1116S-G Datasheet
In Stock2,168
NAME DESCRIPTION
Nominal Transition Frequency (fT): 120 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): .75 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .75 W
JEDEC-95 Code: TO-92
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 200
Maximum Collector-Emitter Voltage: 50 V
Maximum Collector-Base Capacitance: 25 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .3 V
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