Onsemi - KSH122ITU-I

KSH122ITU-I by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number KSH122ITU-I
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 100 V;
Datasheet KSH122ITU-I Datasheet
In Stock1,829
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-251AA
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
No. of Terminals: 3
Maximum Power Dissipation (Abs): 20 W
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 200 pF
Maximum VCEsat: 4 V
Maximum Power Dissipation Ambient: 1.75 W
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Pricing (USD)

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