Onsemi - KSH30C

  1. Home
  2. Onsemi - KSH30C
KSH30C by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number KSH30C
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;
Datasheet KSH30C Datasheet
In Stock1,912
NAME DESCRIPTION
Nominal Transition Frequency (fT): 3 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 15
No. of Terminals: 2
Maximum Power Dissipation (Abs): 15 W
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum VCEsat: .7 V
Maximum Power Dissipation Ambient: 1.56 W
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,912 - -

Popular Products

Category Top Products

TIP31C by SPC TECHNOLOGY/ MULTICOMP

TIP31C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD139-10 by STMicroelectronics

BD139-10

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP125 by Central Semiconductor

TIP125

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
BUV48A by SPC TECHNOLOGY/ MULTICOMP

BUV48A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
TIP42C by Crimson Semiconductor

TIP42C

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; Package Style (Meter): FLANGE MOUNT;
BD679 by Continental Device India

BD679

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
ULN2803A by Allegro MicroSystems

ULN2803A

Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
TIP110 by Bourns

TIP110

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
BCP56-16 by Weitron Technology

BCP56-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
BD14016S by Onsemi

BD14016S

Onsemi

The Onsemi BD14016S is a PNP BJT transistor with 80V VCEO, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications, it has a min hFE of 100 and operates up to 150°C. The through-hole package with matte tin finish is suitable for various electronic designs.
SBCP56-10T1G by Onsemi

SBCP56-10T1G

Onsemi

SBCP56-10T1G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers reliable performance in various electronic designs.
2N3055 by International Devices

2N3055

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD139 by NXP Semiconductors

BD139

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP41C by STMicroelectronics

TIP41C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJE340 by Tt Electronics Plc

MJE340

Tt Electronics Plc

NPN; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.
TIP31-C by Secos

TIP31-C

Secos

Secos TIP31-C is a NPN BJT transistor with max VCEsat of 1.2V, ideal for switching applications. It has a max power dissipation of 40W and max collector-emitter voltage of 100V. With hFE of 10, it operates b/w -65 to 150°C, suitable for high-power circuits in various electronic devices.
TIP36C by Central Semiconductor

TIP36C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
D44H11 by Micro Commercial Components

D44H11

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A; Terminal Finish: TIN LEAD;
TIP29C by Central Semiconductor

TIP29C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;