Onsemi - MGSF3455V

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MGSF3455V by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MGSF3455V
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
Datasheet MGSF3455V Datasheet
In Stock1,349
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 20 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .1 ohm
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Pricing (USD)

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