MJ11032G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MJ11032G
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A; Package Shape: ROUND;
Datasheet	MJ11032G Datasheet
In Stock	116

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Collector Current (IC):	50 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	2
Maximum Power Dissipation (Abs):	300 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	200 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-204AA
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	400
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	120 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
116	-	-

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