Onsemi - MJB45H11G

MJB45H11G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MJB45H11G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
Datasheet MJB45H11G Datasheet
In Stock1,269
NAME DESCRIPTION
Nominal Transition Frequency (fT): 40 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 10 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 40
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Peak Reflow Temperature (C): 260
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