Onsemi - MJE18004D2AS

  1. Home
  2. Onsemi - MJE18004D2AS
MJE18004D2AS by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MJE18004D2AS
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 13 MHz; Maximum Collector Current (IC): 5 A; No. of Terminals: 3;
Datasheet MJE18004D2AS Datasheet
In Stock1,938
NAME DESCRIPTION
Nominal Transition Frequency (fT): 13 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 6
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 450 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: BUILT-IN EFFICIENT ANTISATURATION NETWORK
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,938 - -

Popular Products

Category Top Products

TIP142T by Onsemi

TIP142T

Onsemi

TIP142T by Onsemi is a NPN Darlington BJT with 80W power dissipation, hFE of 1000, and IC of 10A. Ideal for high-power applications in industries like automotive, industrial automation, and power management due to its high current gain and temperature tolerance up to 150°C.
JAN2N3055 by Vpt Components

JAN2N3055

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A; Terminal Position: BOTTOM;
TIP42A by New Jersey Semiconductor Products

TIP42A

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;
2N3055 by Digitron Semiconductors

2N3055

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD243C by Samsung

BD243C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP111 by Central Semiconductor

TIP111

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP36C by Mospec Semiconductor

TIP36C

Mospec Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP147 by Motorola

TIP147

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 10 A; No. of Terminals: 3;
BCP56-16-TP by Micro Commercial Components

BCP56-16-TP

Micro Commercial Components

Micro Commercial Components' BCP56-16-TP is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages. Suitable for surface mount designs operating b/w -55°C to 150°C.
BD679AG by Onsemi

BD679AG

Onsemi

BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
TIP47 by Nte Electronics

TIP47

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
SBCP56-10T1G by Onsemi

SBCP56-10T1G

Onsemi

SBCP56-10T1G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers reliable performance in various electronic designs.
BD679 by Baneasa S A

BD679

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.
TIP147T by Continental Device India

TIP147T

Continental Device India

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
TIP122 by Texas Instruments

TIP122

Texas Instruments

TIP122 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V, hFE of 1000, and IC of 5A. Ideal for switching applications due to its high current gain and low saturation voltage. With a max power dissipation of 65W, it can handle high-power loads efficiently.
JANTX2N3055 by Microsemi

JANTX2N3055

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Position: BOTTOM; Terminal Form: PIN/PEG;
TIP112 by Power Innovations

TIP112

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
FZT857TA by Diodes Incorporated

FZT857TA

Diodes Incorporated

FZT857TA by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 300V, max. collector current of 3.5A, and min. DC current gain of 100 hFE. Ideal for switching applications, it operates b/w -55 to 150°C and has a transition frequency of 80MHz in a small outline package shape.
TIP142 by STMicroelectronics

TIP142

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified;