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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | MJE18004D2G |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 13 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A; |
| Datasheet | MJE18004D2G Datasheet |
| In Stock | 2,004 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 13 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 5 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 75 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 6 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 450 V |
| Additional Features: | BUILT-IN EFFICIENT ANTISATURATION NETWORK |
| Peak Reflow Temperature (C): | 260 |
