MJE5851G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MJE5851G
Description	PNP; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A; Terminal Position: SINGLE;
Datasheet	MJE5851G Datasheet
In Stock	1,113

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8 A
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-220AB
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	5
Terminal Finish:	Tin (Sn)
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	80 W
Maximum Collector-Emitter Voltage:	350 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,113	$1.846	$2,054.598

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