MMBV109L by Onsemi | Diodes

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Manufacturer	Onsemi
Manufacturer's Part Number	MMBV109L
Description	VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	MMBV109L Datasheet
In Stock	921

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	VARIABLE CAPACITANCE DIODE
Frequency Band:	VERY HIGH FREQUENCY
Diode Cap Tolerance:	10.34 %
JEDEC-95 Code:	TO-236AB
Surface Mount:	YES
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
Nominal Diode Capacitance:	29 pF
Diode Element Material:	SILICON
No. of Terminals:	3
Minimum Diode Capacitance Ratio:	5
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Minimum Quality Factor:	200
JESD-30 Code:	R-PDSO-G3
Minimum Breakdown Voltage:	30 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.2 W
Terminal Form:	GULL WING
Maximum Operating Temperature:	125 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
921	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.