Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | MMFT6661T1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 90 V; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | MMFT6661T1 Datasheet |
| In Stock | 739 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .5 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 4 ohm |
| JEDEC-95 Code: | TO-261AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 90 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 235 |
