Onsemi - MTE125N20E

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MTE125N20E by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MTE125N20E
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 460 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 125 A; No. of Elements: 1; JESD-609 Code: e3;
In Stock1,977
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 460 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 125 A
Maximum Drain Current (Abs) (ID): 125 A
Sub-Category: FET General Purpose Power
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
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