Onsemi - NCV8415STT3G

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NCV8415STT3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NCV8415STT3G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Minimum Operating Temperature: -40 Cel; Transistor Application: SWITCHING;
Datasheet NCV8415STT3G Datasheet
In Stock2,174
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 20000 ns
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 2.2 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 90000 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .12 ohm
Avalanche Energy Rating (EAS): 88 mJ
JEDEC-95 Code: TO-261AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 42 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
2,174 $1.000 $2,174.000

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