Onsemi - NDD60N550U1-1G

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NDD60N550U1-1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NDD60N550U1-1G
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
Datasheet NDD60N550U1-1G Datasheet
In Stock1,113
NAME DESCRIPTION
Other Names: 2156-NDD60N550U1-1G-ON
ONSONSNDD60N550U1-1G
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 8.5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 96 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 8.5 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 3
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Pricing (USD)

Qty. Unit Price Ext. Price
1,113 $0.823 $915.999

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