Onsemi - NGB18N40CLBT4

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NGB18N40CLBT4 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB18N40CLBT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Transistor Element Material: SILICON;
Datasheet NGB18N40CLBT4 Datasheet
In Stock1,953
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 18 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Maximum Rise Time (tr): 7000 ns
Transistor Application: AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage: 1.9 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
Nominal Turn Off Time (toff): 13000 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 115 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 5200 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 15000 ns
Other Names: 2156-NGB18N40CLBT4-ONTR
NGB18N40CLBT4OS
ONSONSNGB18N40CLBT4
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 430 V
Maximum Gate-Emitter Voltage: 18 V
Peak Reflow Temperature (C): 235
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