Onsemi - NGB8202ANTF4G

NGB8202ANTF4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB8202ANTF4G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet NGB8202ANTF4G Datasheet
In Stock753
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 20 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
Transistor Element Material: SILICON
Maximum Rise Time (tr): 7000 ns
Transistor Application: POWER CONTROL
Maximum Turn On Time (ton): 9000 ns
Maximum Gate-Emitter Threshold Voltage: 2.1 V
Surface Mount: YES
Nominal Turn Off Time (toff): 18500 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 6500 ns
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 24000 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 14000 ns
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 440 V
Maximum Gate-Emitter Voltage: 15 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.9 V
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Pricing (USD)

Qty. Unit Price Ext. Price
753 $0.950 $715.350

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