NGB8206ANT4G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NGB8206ANT4G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Nominal Turn Off Time (toff): 18500 ns;
Datasheet	NGB8206ANT4G Datasheet
In Stock	2,295

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	20 A
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	8000 ns
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	2.1 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	18500 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	6500 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	14000 ns
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	390 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Gate-Emitter Voltage:	15 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,295	$0.558	$1,280.610

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