Onsemi - NGB8206ANTF4G

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NGB8206ANTF4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB8206ANTF4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Voltage: 15 V;
Datasheet NGB8206ANTF4G Datasheet
In Stock985
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Rise Time (tr): 8000 ns
Maximum Gate-Emitter Threshold Voltage: 2.1 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 150 W
Maximum Collector-Emitter Voltage: 390 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 15 V
Maximum Fall Time (tf): 14000 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
985 $0.984 $969.240

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