Onsemi - NGB8207BNT4G

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NGB8207BNT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB8207BNT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
Datasheet NGB8207BNT4G Datasheet
In Stock1,926
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 2700 ns
Maximum Gate-Emitter Threshold Voltage: 2 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 165 W
Maximum Collector-Emitter Voltage: 365 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 15 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,926 $0.527 $1,015.002

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