Onsemi - NGD8205ANT4G

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NGD8205ANT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGD8205ANT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): 260;
Datasheet NGD8205ANT4G Datasheet
In Stock375
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 8000 ns
Maximum Gate-Emitter Threshold Voltage: 2.1 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 125 W
Maximum Collector-Emitter Voltage: 390 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 15 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 14000 ns
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
375 $0.620 $232.500

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