Onsemi - NGTB20N60L2TF1G

  1. Home
  2. Onsemi - NGTB20N60L2TF1G
NGTB20N60L2TF1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NGTB20N60L2TF1G
Description Insulated Gate Bipolar Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
Datasheet NGTB20N60L2TF1G Datasheet
In Stock872
NAME DESCRIPTION
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
872 $1.550 $1,351.600

Popular Products

Category Top Products

FS150R12KT4PBPSA1 by Infineon Technologies

FS150R12KT4PBPSA1

Infineon Technologies

Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
STGB10NC60KDT4 by STMicroelectronics

STGB10NC60KDT4

STMicroelectronics

STGB10NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 242ns turn-off time. It is used for power control applications, has a small outline package style, and operates at a max temperature of 150°C.
AFGHL75T65SQDT by Onsemi

AFGHL75T65SQDT

Onsemi

AFGHL75T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 174ns and a max power dissipation of 375W. This single configuration transistor operates b/w -55 to 175 °C, making it suitable for various industrial uses.
IKZ75N65ES5XKSA1 by Infineon Technologies

IKZ75N65ES5XKSA1

Infineon Technologies

IKZ75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for various industrial uses.
F4-75R06W1E3 by Infineon Technologies

F4-75R06W1E3

Infineon Technologies

F4-75R06W1E3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 275W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 45ns and low toff of 330ns. The COMPLEX configuration and RECTANGULAR package make it suitable for high-power systems requiring efficient switching capabilities.
CM300DY-12NF by Powerex

CM300DY-12NF

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Qualification: Not Qualified; No. of Elements: 2;
BSM150GB120DN2 by Eupec & Kg

BSM150GB120DN2

Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 210 A; Qualification: Not Qualified;
IKW25N120H3XK by Infineon Technologies

IKW25N120H3XK

Infineon Technologies

IKW25N120H3XK by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 50A. It has a turn-off time of 397ns and turn-on time of 61ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 175°C.
IRG7PH42UD-EP by Infineon Technologies

IRG7PH42UD-EP

Infineon Technologies

IRG7PH42UD-EP by Infineon is an N-channel IGBT with 1200V max collector-emitter voltage and 85A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a max power dissipation of 320W and operating temperature of 150°C, it offers fast switching times of 41ns rise, 86ns fall, and 444ns turn-off.
IKW20N60TFKSA1 by Infineon Technologies

IKW20N60TFKSA1

Infineon Technologies

IKW20N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a turn-off time of 299ns and turn-on time of 36ns, suitable for high-power switching in various industries.
STGP10NC60HD by STMicroelectronics

STGP10NC60HD

STMicroelectronics

STGP10NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 9A max collector current, and 60W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 247ns.
HGT1S10N120BNS by Intersil

HGT1S10N120BNS

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Package Shape: RECTANGULAR;
SKM400GB12E4 by Semikron International

SKM400GB12E4

Semikron International

SKM400GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle a Max Collector Current of 618A. Ideal for POWER CONTROL applications due to its fast Nominal Turn Off Time of 681ns and high Max Collector-Emitter Voltage of 1200V.
FF600R12ME4EB11BOSA1 by Infineon Technologies

FF600R12ME4EB11BOSA1

Infineon Technologies

Infineon's FF600R12ME4EB11BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has VCEsat of 2.1V, toff of 700ns, and VCEmax of 1200V. Ideal for power control applications due to its common emitter configuration and max operating temp of 150°C.
FGA30T65SHD by Fairchild Semiconductor

FGA30T65SHD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
FPF1C2P5MF07AM by Onsemi

FPF1C2P5MF07AM

Onsemi

FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.
FF900R12IP4DVBOSA1 by Infineon Technologies

FF900R12IP4DVBOSA1

Infineon Technologies

FF900R12IP4DVBOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 1300 ns turn off time, and 1200 V max collector-emitter voltage. It is used in applications requiring high power switching such as motor drives and renewable energy systems.
IKZ75N65EL5XKSA1 by Infineon Technologies

IKZ75N65EL5XKSA1

Infineon Technologies

IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
STGWA40H65DFB2 by STMicroelectronics

STGWA40H65DFB2

STMicroelectronics

STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.
IRG4BC30KD-SPBF by International Rectifier

IRG4BC30KD-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Maximum Operating Temperature: 150 Cel;