Onsemi - NGTB50N65FL2WAG

NGTB50N65FL2WAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB50N65FL2WAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 160 A; Package Style (Meter): FLANGE MOUNT;
Datasheet NGTB50N65FL2WAG Datasheet
In Stock2,180
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 160 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff): 223 ns
No. of Terminals: 4
Maximum Power Dissipation (Abs): 417 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 60 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2 V
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Pricing (USD)

Qty. Unit Price Ext. Price
2,180 $2.220 $4,839.600

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