Onsemi - NILMS4501NR2

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NILMS4501NR2 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NILMS4501NR2
Description N-CHANNEL; Configuration: CURRENT MIRROR WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Peak Reflow Temperature (C): 235; Terminal Position: BOTTOM;
Datasheet NILMS4501NR2 Datasheet
In Stock2,170
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: CURRENT MIRROR WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.5 A
Maximum Pulsed Drain Current (IDM): 14 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2.7 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .016 ohm
Avalanche Energy Rating (EAS): 50 mJ
Other Names: ONSONSNILMS4501NR2
2156-NILMS4501NR2-ONTR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 24 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 9.5 A
Peak Reflow Temperature (C): 235
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Pricing (USD)

Qty. Unit Price Ext. Price
2,170 $0.975 $2,115.750

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