Onsemi - NSB1011XV6T5G

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NSB1011XV6T5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSB1011XV6T5G
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Minimum DC Current Gain (hFE): 35;
Datasheet NSB1011XV6T5G Datasheet
In Stock1,347
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .5 W
Transistor Element Material: SILICON
No. of Elements: 2
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 35
Terminal Finish: TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 1
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