Onsemi - NSS12200WT1G

NSS12200WT1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NSS12200WT1G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): 2 A;
Datasheet NSS12200WT1G Datasheet
In Stock2,290
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .65 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Maximum Collector-Base Capacitance: 65 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .29 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,290 $0.090 $206.100

Popular Products

Category Top Products