Onsemi - NSTB1002DXV5T5G

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NSTB1002DXV5T5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSTB1002DXV5T5G
Description NPN AND PNP; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
Datasheet NSTB1002DXV5T5G Datasheet
In Stock2,119
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 70 ns
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 5
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 300 ns
JESD-30 Code: R-PDSO-F5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 1
Peak Reflow Temperature (C): 260
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