NSTB60BDW1T1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSTB60BDW1T1G
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .385 W; Maximum Collector Current (IC): .15 A;
Datasheet	NSTB60BDW1T1G Datasheet
In Stock	925

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	140 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.385 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	NSTB60BDW1T1GOSCT 2156-NSTB60BDW1T1G-OS 488-NSTB60BDW1T1GDKR NSTB60BDW1T1GOSCT-ND ONSONSNSTB60BDW1T1G 2832-NSTB60BDW1T1GTR 488-NSTB60BDW1T1GTR 488-NSTB60BDW1T1GCT NSTB60BDW1T1GOS =NSTB60BDW1T1GOSCT-ND NSTB60BDW1T1GOSTR NSTB60BDW1T1GOS-ND NSTB60BDW1T1GOSTR-ND
Polarity or Channel Type:	NPN AND PNP
Minimum DC Current Gain (hFE):	80
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT IN BIAS RESISTOR RATIO IS 2.13
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
925	$0.031	$28.675

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OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;

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