Onsemi - NSV60201SMTWTBG

  1. Home
  2. Onsemi - NSV60201SMTWTBG
NSV60201SMTWTBG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NSV60201SMTWTBG
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 2 A; JESD-30 Code: S-PDSO-N6;
Datasheet NSV60201SMTWTBG Datasheet
In Stock2,231
NAME DESCRIPTION
Nominal Transition Frequency (fT): 180 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 35
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Reference Standard: AEC-Q101
Case Connection: COLLECTOR
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,231 $0.188 $419.428

Popular Products

Category Top Products

TIP112 by Jiangsu Changjiang Electronics Technology

TIP112

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
TIP36C by Motorola

TIP36C

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP127FP by New Jersey Semiconductor Products

TIP127FP

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON; No. of Elements: 1;
MJE3055TG by Onsemi

MJE3055TG

Onsemi

MJE3055TG by Onsemi is a NPN BJT with max. power dissipation of 75W, max. collector-emitter voltage of 60V, and max. collector current of 10A. Ideal for switching applications due to its single configuration and flange mount package style.
TIP3055 by Motorola

TIP3055

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5;
BD139 by Continental Device India

BD139

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
D44H11 by Rectron

D44H11

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified;
BD679A by Comset Semiconductors

BD679A

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
BD679 by Baneasa S A

BD679

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
ULN2804A by Vishay Intertechnology

ULN2804A

Vishay Intertechnology

Vishay Intertechnology's ULN2804A is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a max collector-emitter voltage of 50V and a max collector current of 0.5A, this NPN transistor in a rectangular package with through-hole terminals offers reliable performance.
JANTX2N3055 by Microsemi

JANTX2N3055

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Position: BOTTOM; Terminal Form: PIN/PEG;
TIP112 by Inchange Semiconductor

TIP112

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
ULN2003ANE4 by Texas Instruments

ULN2003ANE4

Texas Instruments

ULN2003ANE4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with through-hole terminals, suitable for complex configurations.
TIP50 by STMicroelectronics

TIP50

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BUV48A by Onsemi

BUV48A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; No. of Elements: 1;
TIP110 by Bourns

TIP110

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
BDW93C by STMicroelectronics

BDW93C

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB;
D44H11 by SPC TECHNOLOGY/ MULTICOMP

D44H11

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
TIP142 by Power Innovations

TIP142

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
TIP36C by Inchange Semiconductor

TIP36C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;