Onsemi - NSVB123JPDXV6T1G

NSVB123JPDXV6T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVB123JPDXV6T1G
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;
Datasheet NSVB123JPDXV6T1G Datasheet
In Stock136
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
No. of Terminals: 6
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT-IN BIAS RESISTOR RATIO 21.36
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
136 $0.078 $10.608

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