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Manufacturer | Onsemi |
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Manufacturer's Part Number | NSVB123JPDXV6T1G |
Description | NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6; |
Datasheet | NSVB123JPDXV6T1G Datasheet |
In Stock | 136 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .1 A |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Sub-Category: | BIP General Purpose Small Signal |
Polarity or Channel Type: | NPN AND PNP |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 80 |
No. of Terminals: | 6 |
Maximum Power Dissipation (Abs): | .5 W |
Maximum Collector-Emitter Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Additional Features: | BUILT-IN BIAS RESISTOR RATIO 21.36 |
Reference Standard: | AEC-Q101 |