Onsemi - NSVBCP56-10T3G

NSVBCP56-10T3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVBCP56-10T3G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
Datasheet NSVBCP56-10T3G Datasheet
In Stock1,992
NAME DESCRIPTION
Nominal Transition Frequency (fT): 130 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-261AA
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 63
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 80 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,992 $0.131 $260.952

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