Onsemi - NSVJ5908DSG5T1G

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NSVJ5908DSG5T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVJ5908DSG5T1G
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
Datasheet NSVJ5908DSG5T1G Datasheet
In Stock1,951
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .05 A
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 5
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .3 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e6
Minimum Operating Temperature: -55 Cel
Additional Features: LOW NOISE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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