Onsemi - NSVMMBTH81LT1G

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NSVMMBTH81LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVMMBTH81LT1G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
Datasheet NSVMMBTH81LT1G Datasheet
In Stock3,767
NAME DESCRIPTION
Nominal Transition Frequency (fT): 600 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .225 W
Other Names: 488-NSVMMBTH81LT1GTR
488-NSVMMBTH81LT1GCT
488-NSVMMBTH81LT1GDKR
JEDEC-95 Code: TO-236
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 60
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 20 V
Maximum Collector-Base Capacitance: .85 pF
Reference Standard: AEC-Q101
Maximum VCEsat: .5 V
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