Onsemi - NSVMMUN2132LT1G

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NSVMMUN2132LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVMMUN2132LT1G
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
Datasheet NSVMMUN2132LT1G Datasheet
In Stock655
NAME DESCRIPTION
Other Names: 488-NSVMMUN2132LT1GTR
ONSONSNSVMMUN2132LT1G
488-NSVMMUN2132LT1GCT
2156-NSVMMUN2132LT1G-OS
NSVMMUN2132LT1G-ND
488-NSVMMUN2132LT1GDKR
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 15
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .4 W
Maximum Collector-Emitter Voltage: 50 V
Package Style (Meter): SMALL OUTLINE
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
655 $0.025 $16.375

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